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UM6K1N
Transistors
2.5V Drive Nch+Nch MOS FET
UM6K1N
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)
UMT6
2.0
1.3 0.9 0.65
(5) (6) (4)
Features 1) Two 2SK3018 transistors in a single UMT package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 4) Low On-resistance. 5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment.
0.65
0.7
1pin mark
(1) (2)
(3)
1.25 2.1
0.2
0.15
Each lead has same dimensions Abbreviated symbol : K1
Applications Interfacing, switching (30V, 100mA)
Packaging specifications
Package Type UM6K1N Code Basic ordering unit (pieces) Taping TN 3000
Inner circuit
(6)
(5)
Gate Protection Diode
0.1Min.
(4)
Tr1
Tr2
(1)
Gate Protection Diode
(2)
(3)
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 With each pin mounted on the recommended lands.
(1) (2) (3) (4) (5) (6)
Tr1 Tr1 Tr2 Tr2 Tr2 Tr1
Source Gate Drain Source Gate Drain
A protection diode has been built
in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded.
Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 PD 2 Tch Tstg
Limits 30 20 100 400 150 150 -55 to +150
Unit V V mA mA mW C C
Thermal resistance
Parameter Channel to ambient
With each pin mounted on the recommended lands.
Symbol Rth(ch-a)
Limits 833 1042
Unit C / W / TOTAL C / W / ELEMENT
Rev.B
1/3
UM6K1N
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol Min. - 30 - 0.8 - - 20 - - - - - - - IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time RDS (on) Typ. - - - - 5 7 - 13 9 4 15 35 80 80 Max. 1 - 1.0 1.5 8 13 - - - - - - - - Unit A V A V mS pF pF pF ns ns ns ns Conditions VGS=20V, VDS=0V ID= 10A, VGS=0V VDS= 30V, VGS=0V VDS= 3V, ID= 100A ID= 10mA, VGS= 4V ID= 1mA, VGS= 2.5V ID= 10mA, VDS= 3V VDS= 5V VGS=0V f=1MHz VDD 5V ID= 10mA VGS= 5V RL=500 RG=10
Yfs Ciss Coss Crss td (on) tr td (off) tf
Electrical characteristic curves
GATE THRESHOLD VOLTAGE : VGS(th) (V)
0.15 4V
DRAIN CURRENT : ID (A)
200m
3V
DRAIN CURRENT : ID (A)
100m 50m 20m 10m 5m 2m 1m
0.5m
VDS=3V Pulsed
2
VDS=3V ID=0.1mA
3.5V
1.5
0.1
2.5V
1
0.05
2V VGS=1.5V
Ta=125C 75C 25C -25C
0.5
0.2m
0 0
1
2
3
4
5
0.1m 0
1
2
3
4
0 -50 -25
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : VDS (V)
GATE-SOURCE VOLTAGE : VGS (V)
CHANNEL TEMPERATURE : Tch (C)
Fig.1 Typical Output Characteristics
Fig.2 Typical Transfer Characteristics
Fig.3 Gate Threshold Voltage vs. Channel Temperature
50
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
20 10 5
Ta=125C 75C 25C -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
20 10 5
Ta=125C 75C 25C -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
VGS=4V Pulsed
50
VGS=2.5V Pulsed
15
Ta=25C Pulsed
10
2 1 0.5 0.001 0.002
2 1 0.5 0.001 0.002
5
ID=0.1A ID=0.05A
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0 0
5
10
15
20
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( )
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current ( )
Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Rev.B
2/3
UM6K1N
Transistors
9
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
REVERCE DRAIN CURRENT : IDR (A)
8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75
ID=100mA
VGS=4V Pulsed
FORWARD TRANSFER ADMITTANCE : Yfs (S)
0.5
VDS=3V Pulsed
200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m
0.2 0.1 0.05 0.02 0.01 0.005 0.002
100 125 150
VGS=0V Pulsed
ID=50mA
Ta=-25C 25C 75C 125C
Ta=125C 75C 25C -25C
0.001 0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (C)
DRAIN CURRENT : ID (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature
Fig.8 Forward Transfer Admittance vs. Drain Current
Fig.9 Reverse Drain Current vs. Source-Drain Voltage ( )
REVERCE DRAIN CURRENT : IDR (A)
200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V
Ta=25C Pulsed
50
20
CAPACITANCE : C (pF)
Ta=25C f=1MHZ VGS=0V Pulsed
1000 500
SWITHING TIME : t (ns)
tf td(off)
Ta=25C VDD=5V VGS=5V RG=10
Ciss
10 5
200 100 50 20 10 5 2 0.1 0.2
0V
Coss Crss
tr td(on)
2 1
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
0.5 0.1
0.2
0.5
1
2
5
10
20
50
0.5
1
2
5
10
20
50
100
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (mA)
Fig.10 Reverse Drain Current vs. Source-Drain Voltage ( )
Fig.11 Typical Capacitance vs. Drain-Source Voltage
Fig.12 Switching Characteristics
Switching characteristics measurement circuit
Pulse Width 50% 10% 10% 90% 50%
VGS
VGS
ID D.U.T. RL VDS
RG
VDS
10% 90% 90%
td(off) tf toff
VDD
td(on) ton tr
Fig.13
Switching Time Test Circuit
Fig.14
Switching Time Waveforms
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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